{"id":"https://openalex.org/A5111026091","orcid":"https://orcid.org/0000-0002-2580-1707","observed_orcids":["https://orcid.org/0000-0002-2580-1707"],"display_name":"Stanislav N. Knyazev","raw_author_names":["S. N. Knyazev","S. N. Knyzev","S.N. Knyazev","Stanislav N. Knyazev","Stanislav N. Knyzev","\u0421. \u041d. \u041a\u043d\u044f\u0437\u0435\u0432","\u0421.\u041d. \u041a\u043d\u044f\u0437\u0435\u0432"],"full_name":"Stanislav N. Knyazev","works_count":38,"cited_by_count":90,"summary_stats":{"2yr_mean_citedness":0.1,"h_index":6,"i10_index":3},"ids":{"openalex":"https://openalex.org/A5111026091","orcid":"https://orcid.org/0000-0002-2580-1707","observed_orcids":["https://orcid.org/0000-0002-2580-1707"]},"affiliations":[{"institution":{"id":"https://openalex.org/I12003341","ror":"https://ror.org/019vsm959","display_name":"National University of Science and Technology","country_code":"RU","type":"education","lineage":["https://openalex.org/I12003341"]},"years":[2026]},{"institution":{"id":"https://openalex.org/I4210112865","ror":"https://ror.org/01avfbv46","display_name":"Giredmet (Russia)","country_code":"RU","type":"company","lineage":["https://openalex.org/I4210112865"]},"years":[2025,2024,2023,2022,2021,2020,2016,2013,2002]},{"institution":{"id":"https://openalex.org/I67256668","ror":"https://ror.org/00yp5c433","display_name":"National Technical University \"Kharkiv Polytechnic Institute\"","country_code":"UA","type":"education","lineage":["https://openalex.org/I67256668"]},"years":[1991]}],"last_known_institutions":[{"id":"https://openalex.org/I12003341","ror":"https://ror.org/019vsm959","display_name":"National University of Science and Technology","country_code":"RU","type":"education","lineage":["https://openalex.org/I12003341"]}],"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":23,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","count":17,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11087","display_name":"Solidification and crystal growth phenomena","count":13,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":4,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":4,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T13440","display_name":"Electromagnetic Effects on Materials","value":9.29e-05,"subfield":{"id":"https://openalex.org/subfields/2506","display_name":"Metals and Alloys"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","value":7.57e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11087","display_name":"Solidification and crystal growth phenomena","value":7.01e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":4.65e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","value":3.13e-05,"subfield":{"id":"https://openalex.org/subfields/2209","display_name":"Industrial and Manufacturing Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.9038844108581543},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.5020697116851807},{"id":"185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","score":0.4147569537162781},{"id":"41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","score":0.3911835551261902},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.352272093296051}],"counts_by_year":[{"year":1991,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2002,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2013,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2014,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2015,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2016,"works_count":2,"oa_works_count":0,"cited_by_count":1},{"year":2017,"works_count":1,"oa_works_count":0,"cited_by_count":2},{"year":2018,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2020,"works_count":6,"oa_works_count":2,"cited_by_count":3},{"year":2021,"works_count":7,"oa_works_count":4,"cited_by_count":7},{"year":2022,"works_count":4,"oa_works_count":1,"cited_by_count":7},{"year":2023,"works_count":3,"oa_works_count":3,"cited_by_count":22},{"year":2024,"works_count":6,"oa_works_count":4,"cited_by_count":13},{"year":2025,"works_count":3,"oa_works_count":1,"cited_by_count":10},{"year":2026,"works_count":1,"oa_works_count":1,"cited_by_count":4}],"display_name_alternatives":["S. N. Knyazev","S. N. Knyzev","S.N. Knyazev","Stanislav N. Knyazev","Stanislav N. Knyzev","\u0421. \u041d. \u041a\u043d\u044f\u0437\u0435\u0432","\u0421.\u041d. \u041a\u043d\u044f\u0437\u0435\u0432"],"block_key":"s knyazev","works_api_url":"https://api.openalex.org/works?filter=author.id:A5111026091","awards_count":0,"awards_api_url":"https://api.openalex.org/awards?filter=investigators.author.id:A5111026091","updated_date":"2026-11-10T14:30:39","created_date":"2016-06-24T00:00:00"}