{"id":"https://openalex.org/A5110193233","orcid":null,"observed_orcids":[],"display_name":"Shaoyan Yang","raw_author_names":["Shao-Yan Yang","Shao-yan Yang","Shaoyan Yang","\u6768\u5c11\u5ef6"],"full_name":"Shaoyan Yang","works_count":21,"cited_by_count":127,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":7,"i10_index":6},"ids":{"openalex":"https://openalex.org/A5110193233","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I178232147","ror":"https://ror.org/02wmsc916","display_name":"Guizhou University","country_code":"CN","type":"education","lineage":["https://openalex.org/I178232147"]},"years":[2024]},{"institution":{"id":"https://openalex.org/I19820366","ror":"https://ror.org/034t30j35","display_name":"Chinese Academy of Sciences","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},"years":[2017,2016,2015,2013,2011,2009,2004,2003,2002]},{"institution":{"id":"https://openalex.org/I4210112946","ror":"https://ror.org/01y3hvq34","display_name":"Shanghai Institute of Organic Chemistry","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210112946"]},"years":[2017]},{"institution":{"id":"https://openalex.org/I4210149211","ror":"https://ror.org/048dd0611","display_name":"Institute of Semiconductors","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},"years":[2017,2016,2015,2013,2011,2010,2009,2004,2003,2002]},{"institution":{"id":"https://openalex.org/I4210165038","ror":"https://ror.org/05qbk4x57","display_name":"University of Chinese Academy of Sciences","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},"years":[2016]}],"last_known_institutions":[{"id":"https://openalex.org/I178232147","ror":"https://ror.org/02wmsc916","display_name":"Guizhou University","country_code":"CN","type":"education","lineage":["https://openalex.org/I178232147"]}],"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":12,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":7,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","count":6,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","count":6,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","count":5,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","value":6.41e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":5.16e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","value":2.3e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","value":2.13e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","value":1.9e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","score":0.9510135650634766},{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.9092431664466858},{"id":"171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","score":0.6753919124603271},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.546736478805542},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.09766653180122375}],"counts_by_year":[{"year":2002,"works_count":3,"oa_works_count":0,"cited_by_count":0},{"year":2003,"works_count":3,"oa_works_count":0,"cited_by_count":0},{"year":2004,"works_count":3,"oa_works_count":2,"cited_by_count":0},{"year":2009,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2010,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2011,"works_count":2,"oa_works_count":2,"cited_by_count":0},{"year":2012,"works_count":0,"oa_works_count":0,"cited_by_count":3},{"year":2013,"works_count":1,"oa_works_count":0,"cited_by_count":5},{"year":2014,"works_count":0,"oa_works_count":0,"cited_by_count":4},{"year":2015,"works_count":1,"oa_works_count":0,"cited_by_count":5},{"year":2016,"works_count":3,"oa_works_count":2,"cited_by_count":15},{"year":2017,"works_count":2,"oa_works_count":1,"cited_by_count":8},{"year":2018,"works_count":0,"oa_works_count":0,"cited_by_count":8},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":16},{"year":2020,"works_count":0,"oa_works_count":0,"cited_by_count":11},{"year":2021,"works_count":0,"oa_works_count":0,"cited_by_count":5},{"year":2022,"works_count":0,"oa_works_count":0,"cited_by_count":5},{"year":2023,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2024,"works_count":1,"oa_works_count":0,"cited_by_count":1},{"year":2025,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2026,"works_count":0,"oa_works_count":0,"cited_by_count":1}],"display_name_alternatives":["Shao-Yan Yang","Shao-yan Yang","Shaoyan Yang","\u6768\u5c11\u5ef6"],"block_key":"s yang","works_api_url":"https://api.openalex.org/works?filter=author.id:A5110193233","updated_date":"2026-11-07T12:08:38","created_date":"2016-06-24T00:00:00"}