{"id":"https://openalex.org/A5108627031","orcid":null,"observed_orcids":[],"display_name":"Genji Nakamura","raw_author_names":["G Nakamura","G. Nakamura","Gen Washidzu Nakamura","Genji Nakamura"],"full_name":"Genji Nakamura","works_count":37,"cited_by_count":326,"summary_stats":{"2yr_mean_citedness":4.0,"h_index":11,"i10_index":11},"ids":{"openalex":"https://openalex.org/A5108627031","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I114132059","ror":"https://ror.org/05gd76j39","display_name":"Tokyo Electron (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]},"years":[2024,2023,2020,2016,2014,2011,2007]},{"institution":{"id":"https://openalex.org/I204291657","ror":"https://ror.org/00bx6dj65","display_name":"Hosei University","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]},"years":[1991]},{"institution":{"id":"https://openalex.org/I4210094722","ror":"https://ror.org/00tbs6p91","display_name":"Center for Nanoscale Science and Technology","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065","https://openalex.org/I4210094722"]},"years":[2015,2014]},{"institution":{"id":"https://openalex.org/I4405276234","ror":"https://ror.org/0523jgb37","display_name":"Semiconductor Leading Edge Technologies, Inc (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405276234"]},"years":[2007,2006,2005]}],"last_known_institutions":[{"id":"https://openalex.org/I114132059","ror":"https://ror.org/05gd76j39","display_name":"Tokyo Electron (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":37,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","count":25,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","count":23,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":14,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","count":9,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","value":0.0002506,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","value":0.0002468,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":7.67e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","value":3.34e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":2.83e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.850923478603363},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.6243301630020142},{"id":"191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","score":0.5021572113037109},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.4714197814464569},{"id":"171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","score":0.4363086521625519}],"counts_by_year":[{"year":1991,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2005,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2006,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2007,"works_count":5,"oa_works_count":3,"cited_by_count":0},{"year":2010,"works_count":2,"oa_works_count":1,"cited_by_count":0},{"year":2011,"works_count":7,"oa_works_count":5,"cited_by_count":0},{"year":2012,"works_count":3,"oa_works_count":0,"cited_by_count":16},{"year":2013,"works_count":1,"oa_works_count":1,"cited_by_count":15},{"year":2014,"works_count":7,"oa_works_count":3,"cited_by_count":28},{"year":2015,"works_count":2,"oa_works_count":0,"cited_by_count":25},{"year":2016,"works_count":1,"oa_works_count":0,"cited_by_count":26},{"year":2017,"works_count":0,"oa_works_count":0,"cited_by_count":13},{"year":2018,"works_count":0,"oa_works_count":0,"cited_by_count":13},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":7},{"year":2020,"works_count":2,"oa_works_count":0,"cited_by_count":13},{"year":2021,"works_count":1,"oa_works_count":0,"cited_by_count":20},{"year":2022,"works_count":1,"oa_works_count":0,"cited_by_count":3},{"year":2023,"works_count":1,"oa_works_count":0,"cited_by_count":5},{"year":2024,"works_count":1,"oa_works_count":0,"cited_by_count":7},{"year":2025,"works_count":0,"oa_works_count":0,"cited_by_count":15},{"year":2026,"works_count":0,"oa_works_count":0,"cited_by_count":9}],"display_name_alternatives":["G Nakamura","G. Nakamura","Gen Washidzu Nakamura","Genji Nakamura"],"block_key":"g nakamura","works_api_url":"https://api.openalex.org/works?filter=author.id:A5108627031","awards_count":0,"updated_date":"2026-11-08T12:57:04","created_date":"2016-06-24T00:00:00"}