{"id":"https://openalex.org/A5086201085","orcid":null,"observed_orcids":[],"display_name":"\u0639 \u0639\u0637\u0627\u0641","raw_author_names":["\u0639 \u0639\u0637\u0627\u0641"],"full_name":"\u0639 \u0639\u0637\u0627\u0641","works_count":1,"cited_by_count":0,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":0,"i10_index":0},"ids":{"openalex":"https://openalex.org/A5086201085","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I206961696","ror":"https://ror.org/05fr5y859","display_name":"University of Biskra","country_code":"DZ","type":"education","lineage":["https://openalex.org/I206961696"]},"years":[2001]}],"last_known_institutions":[{"id":"https://openalex.org/I206961696","ror":"https://ror.org/05fr5y859","display_name":"University of Biskra","country_code":"DZ","type":"education","lineage":["https://openalex.org/I206961696"]}],"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":1,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":1,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":4.3e-06,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":2.1e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":2e-06,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","score":0.530301570892334},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.3630799353122711},{"id":"41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","score":0.26077955961227417},{"id":"76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","score":0.25913679599761963}],"counts_by_year":[{"year":2001,"works_count":1,"oa_works_count":1,"cited_by_count":0}],"display_name_alternatives":["\u0639 \u0639\u0637\u0627\u0641"],"block_key":"a ataf","works_api_url":"https://api.openalex.org/works?filter=author.id:A5086201085","updated_date":"2026-10-05T12:30:24","created_date":"2025-10-10T00:00:00"}