{"id":"https://openalex.org/A5085648505","orcid":null,"observed_orcids":[],"display_name":"Ferdinando Portuese","raw_author_names":["F. Portuese","Ferdinando Portuese"],"full_name":"Ferdinando Portuese","works_count":19,"cited_by_count":119,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":5,"i10_index":4},"ids":{"openalex":"https://openalex.org/A5085648505","orcid":null,"observed_orcids":[]},"affiliations":[],"last_known_institutions":null,"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":17,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":15,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":10,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":6,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10132","display_name":"Advanced ceramic materials synthesis","count":2,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":7.6e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":4.19e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":2.94e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","value":1.49e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":1.2e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.9292393922805786},{"id":"110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","score":0.9114906787872314},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.7223231792449951},{"id":"2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","score":0.6178382635116577},{"id":"171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","score":0.3404967784881592}],"counts_by_year":[{"year":2005,"works_count":2,"oa_works_count":0,"cited_by_count":29},{"year":2006,"works_count":8,"oa_works_count":4,"cited_by_count":52},{"year":2007,"works_count":6,"oa_works_count":6,"cited_by_count":23},{"year":2008,"works_count":2,"oa_works_count":1,"cited_by_count":13},{"year":2011,"works_count":1,"oa_works_count":0,"cited_by_count":2}],"display_name_alternatives":["F. Portuese","Ferdinando Portuese"],"block_key":"f portuese","works_api_url":"https://api.openalex.org/works?filter=author.id:A5085648505","updated_date":"2026-10-12T12:34:37","created_date":"2025-10-10T00:00:00"}