{"id":"https://openalex.org/A5072267166","orcid":"https://orcid.org/0000-0002-1694-2102","observed_orcids":["https://orcid.org/0000-0002-1694-2102"],"display_name":"Kagiso Loeto","raw_author_names":["K Loeto","K. Loeto","Kagiso Loeto","Loeto, K","Loeto, Kagiso"],"full_name":"Kagiso Loeto","works_count":14,"cited_by_count":46,"summary_stats":{"2yr_mean_citedness":1.0,"h_index":4,"i10_index":1},"ids":{"openalex":"https://openalex.org/A5072267166","orcid":"https://orcid.org/0000-0002-1694-2102","observed_orcids":["https://orcid.org/0000-0002-1694-2102"]},"affiliations":[{"institution":{"id":"https://openalex.org/I241749","ror":"https://ror.org/013meh722","display_name":"University of Cambridge","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]},"years":[2024,2023,2022,2021]},{"institution":{"id":"https://openalex.org/I4210116306","ror":"https://ror.org/01mk1hj86","display_name":"Paul Drude Institute for Solid State Electronics","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]},"years":[2026,2025,2024]},{"institution":{"id":"https://openalex.org/I4210156597","ror":"https://ror.org/059m1v232","display_name":"Forschungsverbund Berlin","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210156597"]},"years":[2025,2024]}],"last_known_institutions":[{"id":"https://openalex.org/I4210116306","ror":"https://ror.org/01mk1hj86","display_name":"Paul Drude Institute for Solid State Electronics","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]}],"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":12,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","count":8,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10097","display_name":"Luminescence Properties of Advanced Materials","count":8,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","count":3,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13552","display_name":"Advanced Materials Characterization Techniques","count":3,"subfield":{"id":"https://openalex.org/subfields/2500","display_name":"General Materials Science"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":5.16e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13552","display_name":"Advanced Materials Characterization Techniques","value":3.9e-05,"subfield":{"id":"https://openalex.org/subfields/2500","display_name":"General Materials Science"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","value":3.2e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10097","display_name":"Luminescence Properties of Advanced Materials","value":2.79e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","value":2.12e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"139861200","wikidata":"https://www.wikidata.org/wiki/Q369794","display_name":"Cathodoluminescence","score":0.9901000261306763},{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.825215756893158},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.7201318740844727},{"id":"148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","score":0.49309998750686646},{"id":"120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","score":0.364300012588501}],"counts_by_year":[{"year":2021,"works_count":3,"oa_works_count":3,"cited_by_count":0},{"year":2022,"works_count":1,"oa_works_count":1,"cited_by_count":3},{"year":2023,"works_count":4,"oa_works_count":3,"cited_by_count":9},{"year":2024,"works_count":4,"oa_works_count":4,"cited_by_count":16},{"year":2025,"works_count":1,"oa_works_count":0,"cited_by_count":11},{"year":2026,"works_count":1,"oa_works_count":0,"cited_by_count":7}],"display_name_alternatives":["K Loeto","K. Loeto","Kagiso Loeto","Loeto, K","Loeto, Kagiso"],"block_key":"k loeto","works_api_url":"https://api.openalex.org/works?filter=author.id:A5072267166","awards_count":1,"awards_api_url":"https://api.openalex.org/awards?filter=investigators.author.id:A5072267166","updated_date":"2026-11-10T14:30:39","created_date":"2021-03-01T00:00:00"}