{"id":"https://openalex.org/A5041324880","orcid":null,"observed_orcids":[],"display_name":"Kazuhide Ino","raw_author_names":["K. Ino","Kazuhide INO","Kazuhide Ino"],"full_name":"Kazuhide Ino","works_count":27,"cited_by_count":249,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":9,"i10_index":7},"ids":{"openalex":"https://openalex.org/A5041324880","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I162282272","ror":"https://ror.org/00vttj605","display_name":"ROHM","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]},"years":[2019,2014]},{"institution":{"id":"https://openalex.org/I201537933","ror":"https://ror.org/01dq60k83","display_name":"Tohoku University","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},"years":[2005,2002,1999,1998,1997,1996,1994]},{"institution":{"id":"https://openalex.org/I4405285984","ror":"https://ror.org/00vbrys56","display_name":"Research Institute of Electrical Communication, Tohoku University","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]},"years":[2002,1999,1998]}],"last_known_institutions":[{"id":"https://openalex.org/I162282272","ror":"https://ror.org/00vttj605","display_name":"ROHM","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":13,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":12,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","count":8,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","count":8,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":7,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","value":0.0001037,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","value":7.59e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":3.08e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":2.57e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":2.32e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.8833392858505249},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.6462134122848511},{"id":"127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","score":0.5002131462097168},{"id":"191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","score":0.3384193181991577},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.25824451446533203}],"counts_by_year":[{"year":1994,"works_count":3,"oa_works_count":0,"cited_by_count":0},{"year":1995,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":1996,"works_count":1,"oa_works_count":1,"cited_by_count":0},{"year":1997,"works_count":5,"oa_works_count":0,"cited_by_count":0},{"year":1998,"works_count":5,"oa_works_count":2,"cited_by_count":0},{"year":1999,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2002,"works_count":3,"oa_works_count":0,"cited_by_count":0},{"year":2005,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2012,"works_count":0,"oa_works_count":0,"cited_by_count":4},{"year":2013,"works_count":0,"oa_works_count":0,"cited_by_count":7},{"year":2014,"works_count":2,"oa_works_count":0,"cited_by_count":5},{"year":2015,"works_count":1,"oa_works_count":0,"cited_by_count":7},{"year":2016,"works_count":1,"oa_works_count":0,"cited_by_count":5},{"year":2017,"works_count":0,"oa_works_count":0,"cited_by_count":8},{"year":2018,"works_count":1,"oa_works_count":0,"cited_by_count":6},{"year":2019,"works_count":1,"oa_works_count":0,"cited_by_count":16},{"year":2020,"works_count":0,"oa_works_count":0,"cited_by_count":11},{"year":2021,"works_count":0,"oa_works_count":0,"cited_by_count":6},{"year":2022,"works_count":0,"oa_works_count":0,"cited_by_count":12},{"year":2023,"works_count":0,"oa_works_count":0,"cited_by_count":10},{"year":2024,"works_count":0,"oa_works_count":0,"cited_by_count":6},{"year":2025,"works_count":0,"oa_works_count":0,"cited_by_count":17},{"year":2026,"works_count":0,"oa_works_count":0,"cited_by_count":4}],"display_name_alternatives":["K. Ino","Kazuhide INO","Kazuhide Ino"],"block_key":"k ino","works_api_url":"https://api.openalex.org/works?filter=author.id:A5041324880","updated_date":"2026-10-31T12:29:50","created_date":"2016-06-24T00:00:00"}