{"id":"https://openalex.org/A5041217536","orcid":"https://orcid.org/0000-0002-6536-8346","observed_orcids":["https://orcid.org/0000-0002-6536-8346"],"display_name":"Linhua Huang","raw_author_names":["Huang, Linhua","Linhua Huang"],"full_name":"Linhua Huang","works_count":20,"cited_by_count":272,"summary_stats":{"2yr_mean_citedness":4.0,"h_index":10,"i10_index":10},"ids":{"openalex":"https://openalex.org/A5041217536","orcid":"https://orcid.org/0000-0002-6536-8346","observed_orcids":["https://orcid.org/0000-0002-6536-8346"]},"affiliations":[{"institution":{"id":"https://openalex.org/I150229711","ror":"https://ror.org/04qr3zq92","display_name":"University of Electronic Science and Technology of China","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},"years":[2018,2017,2016]},{"institution":{"id":"https://openalex.org/I200769079","ror":"https://ror.org/00q4vv597","display_name":"Hong Kong University of Science and Technology","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]},"years":[2024,2023,2022,2021,2020,2019]},{"institution":{"id":"https://openalex.org/I4391767659","ror":"https://ror.org/01t9yse95","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","country_code":null,"type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]},"years":[2018,2017,2016]}],"last_known_institutions":[{"id":"https://openalex.org/I200769079","ror":"https://ror.org/00q4vv597","display_name":"Hong Kong University of Science and Technology","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":20,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":18,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","count":8,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":6,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":5,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":8.81e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":3.56e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","value":2.84e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":2.47e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","value":1.04e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.7590236663818359},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.6632221937179565},{"id":"119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","score":0.567926287651062},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.39415520429611206},{"id":"127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","score":0.2827000021934509}],"counts_by_year":[{"year":2016,"works_count":1,"oa_works_count":0,"cited_by_count":26},{"year":2017,"works_count":3,"oa_works_count":0,"cited_by_count":98},{"year":2018,"works_count":4,"oa_works_count":0,"cited_by_count":71},{"year":2019,"works_count":1,"oa_works_count":0,"cited_by_count":17},{"year":2020,"works_count":1,"oa_works_count":0,"cited_by_count":5},{"year":2021,"works_count":1,"oa_works_count":0,"cited_by_count":18},{"year":2022,"works_count":3,"oa_works_count":0,"cited_by_count":30},{"year":2023,"works_count":5,"oa_works_count":0,"cited_by_count":3},{"year":2024,"works_count":1,"oa_works_count":0,"cited_by_count":4}],"display_name_alternatives":["Huang, Linhua","Linhua Huang"],"block_key":"l huang","works_api_url":"https://api.openalex.org/works?filter=author.id:A5041217536","updated_date":"2026-10-15T12:44:11","created_date":"2021-03-01T00:00:00"}