{"id":"https://openalex.org/A5027770808","orcid":"https://orcid.org/0009-0001-3165-3106","observed_orcids":["https://orcid.org/0009-0001-3165-3106"],"display_name":"Xian Sheng Wang","raw_author_names":["X Wang","X. S. Wang","Xian Sheng Wang"],"full_name":"Xian Sheng Wang","works_count":4,"cited_by_count":5,"summary_stats":{"2yr_mean_citedness":1.6666666666666667,"h_index":2,"i10_index":0},"ids":{"openalex":"https://openalex.org/A5027770808","orcid":"https://orcid.org/0009-0001-3165-3106","observed_orcids":["https://orcid.org/0009-0001-3165-3106"]},"affiliations":[{"institution":{"id":"https://openalex.org/I32574673","ror":"https://ror.org/01a099706","display_name":"Shantou University","country_code":"CN","type":"education","lineage":["https://openalex.org/I32574673"]},"years":[2026,2025]}],"last_known_institutions":[{"id":"https://openalex.org/I32574673","ror":"https://ror.org/01a099706","display_name":"Shantou University","country_code":"CN","type":"education","lineage":["https://openalex.org/I32574673"]}],"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","count":2,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","count":2,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","count":2,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","count":1,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":1,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","value":7.27e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","value":1.07e-05,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","value":1e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","value":9.1e-06,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":4.3e-06,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.9236000180244446},{"id":"181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","score":0.7652999758720398},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.7478541135787964},{"id":"189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","score":0.5616999864578247},{"id":"171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","score":0.41074612736701965}],"counts_by_year":[{"year":2011,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2025,"works_count":1,"oa_works_count":1,"cited_by_count":3},{"year":2026,"works_count":2,"oa_works_count":0,"cited_by_count":2}],"display_name_alternatives":["X Wang","X. S. Wang","Xian Sheng Wang"],"block_key":"x wang","works_api_url":"https://api.openalex.org/works?filter=author.id:A5027770808","updated_date":"2026-10-10T12:59:14","created_date":"2025-10-10T00:00:00"}