{"id":"https://openalex.org/A5003199767","orcid":null,"observed_orcids":[],"display_name":"D. D. Roccasecca","raw_author_names":["D. D. ROCCASECCA","D. D. Roccasecca","D. Roccasecca","D.D. Roccasecca"],"full_name":"D. D. Roccasecca","works_count":16,"cited_by_count":208,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":9,"i10_index":9},"ids":{"openalex":"https://openalex.org/A5003199767","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I1283103587","ror":"https://ror.org/02bbd5539","display_name":"AT&T (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I1283103587"]},"years":[1994,1989,1985]}],"last_known_institutions":[{"id":"https://openalex.org/I1283103587","ror":"https://ror.org/02bbd5539","display_name":"AT&T (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I1283103587"]}],"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":9,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","count":6,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","count":5,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","count":4,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":4,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","value":2.56e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","value":2.15e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11087","display_name":"Solidification and crystal growth phenomena","value":2.05e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":1.74e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":1.65e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.8385201692581177},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.8202183246612549},{"id":"2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","score":0.5650831460952759},{"id":"171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","score":0.34045565128326416},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.3173227608203888}],"counts_by_year":[{"year":1968,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":1973,"works_count":5,"oa_works_count":2,"cited_by_count":0},{"year":1974,"works_count":2,"oa_works_count":1,"cited_by_count":0},{"year":1980,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":1981,"works_count":1,"oa_works_count":1,"cited_by_count":0},{"year":1984,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":1985,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":1989,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":1994,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2014,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2015,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2016,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2018,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2020,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2021,"works_count":0,"oa_works_count":0,"cited_by_count":1},{"year":2022,"works_count":0,"oa_works_count":0,"cited_by_count":2},{"year":2024,"works_count":0,"oa_works_count":0,"cited_by_count":1}],"display_name_alternatives":["D. D. ROCCASECCA","D. D. Roccasecca","D. Roccasecca","D.D. Roccasecca"],"block_key":"d roccasecca","works_api_url":"https://api.openalex.org/works?filter=author.id:A5003199767","updated_date":"2026-10-27T12:30:23","created_date":"2016-06-24T00:00:00"}