{"id":"https://openalex.org/A5000966631","orcid":null,"observed_orcids":[],"display_name":"Karim S. Boutros","raw_author_names":["Boutros, K.","K Boutros","K. Boutros","K. S. Boutros","K.S. Boutros","Karim Boutros","Karim S. Boutros"],"full_name":"Karim S. Boutros","works_count":85,"cited_by_count":2541,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":27,"i10_index":48},"ids":{"openalex":"https://openalex.org/A5000966631","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I137902535","ror":"https://ror.org/04tj63d06","display_name":"North Carolina State University","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]},"years":[1997,1996,1995,1994,1992]},{"institution":{"id":"https://openalex.org/I163698344","ror":"https://ror.org/0154hk987","display_name":"Entegris (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I163698344"]},"years":[1997]},{"institution":{"id":"https://openalex.org/I166416128","ror":"https://ror.org/011hc8f90","display_name":"DEVCOM Army Research Laboratory","country_code":"US","type":"government","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I166416128","https://openalex.org/I2802705668","https://openalex.org/I4210154437"]},"years":[2006]},{"institution":{"id":"https://openalex.org/I200576644","ror":"https://ror.org/05p7te762","display_name":"HRL Laboratories (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]},"years":[2015,2014,2013,2012,2011,2010,2009]},{"institution":{"id":"https://openalex.org/I4210116693","ror":"https://ror.org/0265tbd09","display_name":"Advanced Materials Technology (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I4210116693"]},"years":[2000,1998]},{"institution":{"id":"https://openalex.org/I4387152679","ror":"https://ror.org/0009eec40","display_name":"Laboratoire de Linguistique de Nantes","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I4387152679","https://openalex.org/I97188460"]},"years":[1997]},{"institution":{"id":"https://openalex.org/I4387153722","ror":"https://ror.org/03j7mz841","display_name":"Centre d\u2019Archives en Philosophie, Histoire et \u00c9dition des Sciences","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2746051580","https://openalex.org/I29607241","https://openalex.org/I4387153722"]},"years":[1997]},{"institution":{"id":"https://openalex.org/I880619579","ror":"https://ror.org/00a1gne75","display_name":"Teledyne Technologies (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I880619579"]},"years":[2008,2007]}],"last_known_institutions":[{"id":"https://openalex.org/I200576644","ror":"https://ror.org/05p7te762","display_name":"HRL Laboratories (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":77,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":53,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","count":16,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":15,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":13,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","value":0.0004325,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":0.0003312,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":0.0002426,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","value":0.0001136,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","value":8.99e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.932454526424408},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.8362877368927002},{"id":"2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","score":0.5608521699905396},{"id":"121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","score":0.3939661979675293},{"id":"171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","score":0.35850852727890015}],"counts_by_year":[{"year":1992,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":1994,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":1995,"works_count":9,"oa_works_count":0,"cited_by_count":0},{"year":1996,"works_count":5,"oa_works_count":0,"cited_by_count":0},{"year":1997,"works_count":5,"oa_works_count":0,"cited_by_count":0},{"year":1998,"works_count":10,"oa_works_count":0,"cited_by_count":0},{"year":1999,"works_count":8,"oa_works_count":1,"cited_by_count":0},{"year":2000,"works_count":6,"oa_works_count":4,"cited_by_count":0},{"year":2002,"works_count":3,"oa_works_count":0,"cited_by_count":0},{"year":2003,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2004,"works_count":3,"oa_works_count":0,"cited_by_count":0},{"year":2005,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2006,"works_count":6,"oa_works_count":1,"cited_by_count":0},{"year":2007,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2008,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2009,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2010,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2011,"works_count":4,"oa_works_count":0,"cited_by_count":0},{"year":2012,"works_count":5,"oa_works_count":1,"cited_by_count":93},{"year":2013,"works_count":5,"oa_works_count":0,"cited_by_count":150},{"year":2014,"works_count":4,"oa_works_count":1,"cited_by_count":138},{"year":2015,"works_count":1,"oa_works_count":0,"cited_by_count":123},{"year":2016,"works_count":0,"oa_works_count":0,"cited_by_count":137},{"year":2017,"works_count":0,"oa_works_count":0,"cited_by_count":115},{"year":2018,"works_count":0,"oa_works_count":0,"cited_by_count":109},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":106},{"year":2020,"works_count":0,"oa_works_count":0,"cited_by_count":104},{"year":2021,"works_count":0,"oa_works_count":0,"cited_by_count":100},{"year":2022,"works_count":0,"oa_works_count":0,"cited_by_count":83},{"year":2023,"works_count":0,"oa_works_count":0,"cited_by_count":85},{"year":2024,"works_count":0,"oa_works_count":0,"cited_by_count":74},{"year":2025,"works_count":0,"oa_works_count":0,"cited_by_count":63},{"year":2026,"works_count":0,"oa_works_count":0,"cited_by_count":51}],"display_name_alternatives":["Boutros, K.","K Boutros","K. Boutros","K. S. Boutros","K.S. Boutros","Karim Boutros","Karim S. Boutros"],"block_key":"k boutros","works_api_url":"https://api.openalex.org/works?filter=author.id:A5000966631","updated_date":"2026-11-08T12:57:04","created_date":"2016-06-24T00:00:00"}