{"id":"https://openalex.org/A5000368168","orcid":null,"observed_orcids":[],"display_name":"Toshiyuki Naka","raw_author_names":["T. Naka","Toshiyuki NAKA","Toshiyuki Naka"],"full_name":"Toshiyuki Naka","works_count":19,"cited_by_count":282,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":9,"i10_index":9},"ids":{"openalex":"https://openalex.org/A5000368168","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I1292669757","ror":"https://ror.org/0326v3z14","display_name":"Toshiba (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]},"years":[2018,2017,2016,2015,2012,2009,2008,2007]},{"institution":{"id":"https://openalex.org/I135598925","ror":"https://ror.org/00p4k0j84","display_name":"Kyushu University","country_code":"JP","type":"education","lineage":["https://openalex.org/I135598925"]},"years":[2004]},{"institution":{"id":"https://openalex.org/I4405264947","ror":"https://ror.org/03eekr767","display_name":"Sharp Corporation (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405264947"]},"years":[2002]},{"institution":{"id":"https://openalex.org/I4405275642","ror":"https://ror.org/040wv9y89","display_name":"Toshiba Electronic Devices & Storage Corporation (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405275642"]},"years":[2018,2017,2016]}],"last_known_institutions":[{"id":"https://openalex.org/I1292669757","ror":"https://ror.org/0326v3z14","display_name":"Toshiba (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]},{"id":"https://openalex.org/I4405275642","ror":"https://ror.org/040wv9y89","display_name":"Toshiba Electronic Devices & Storage Corporation (Japan)","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405275642"]}],"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":14,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":13,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","count":6,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","count":4,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","count":4,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","value":0.0001381,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","value":8.8e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":6.16e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":5.35e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","value":4.72e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.9225044846534729},{"id":"172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","score":0.7431594133377075},{"id":"119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","score":0.6729196906089783},{"id":"165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","score":0.5880163311958313},{"id":"127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","score":0.39738813042640686}],"counts_by_year":[{"year":2002,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2004,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2007,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2008,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2009,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2012,"works_count":1,"oa_works_count":0,"cited_by_count":3},{"year":2013,"works_count":0,"oa_works_count":0,"cited_by_count":9},{"year":2014,"works_count":0,"oa_works_count":0,"cited_by_count":8},{"year":2015,"works_count":3,"oa_works_count":0,"cited_by_count":5},{"year":2016,"works_count":5,"oa_works_count":1,"cited_by_count":5},{"year":2017,"works_count":3,"oa_works_count":0,"cited_by_count":17},{"year":2018,"works_count":1,"oa_works_count":0,"cited_by_count":15},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":14},{"year":2020,"works_count":0,"oa_works_count":0,"cited_by_count":30},{"year":2021,"works_count":0,"oa_works_count":0,"cited_by_count":31},{"year":2022,"works_count":0,"oa_works_count":0,"cited_by_count":22},{"year":2023,"works_count":0,"oa_works_count":0,"cited_by_count":24},{"year":2024,"works_count":0,"oa_works_count":0,"cited_by_count":18},{"year":2025,"works_count":0,"oa_works_count":0,"cited_by_count":29},{"year":2026,"works_count":0,"oa_works_count":0,"cited_by_count":19}],"display_name_alternatives":["T. Naka","Toshiyuki NAKA","Toshiyuki Naka"],"block_key":"t naka","works_api_url":"https://api.openalex.org/works?filter=author.id:A5000368168","updated_date":"2026-10-28T12:34:19","created_date":"2016-06-24T00:00:00"}